发明名称 |
ELECTRONIC COMPONENT |
摘要 |
An element body includes a first principal surface and a second principal surface opposing each other in a first direction. A first terminal electrode is disposed on the first principal surface side of the element body. A second terminal electrode is disposed on the second principal surface side of the element body. The first terminal electrode includes a first sintered metal layer formed on the first principal surface; and a first plating layer formed on the first sintered metal layer and including base metal. The second terminal electrode includes a second sintered metal layer formed on the second principal surface, a second plating layer formed on the second sintered metal layer and including base metal, and a solder layer formed on the second plating layer and including Sn and a metal having a higher melting point than the melting point of Sn. |
申请公布号 |
US2017092423(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615270744 |
申请日期 |
2016.09.20 |
申请人 |
TDK CORPORATION |
发明人 |
IWAMA Masahiro;TAMURA Takehisa;SATO Atsushi;OI Tomonori |
分类号 |
H01G4/232;H01G4/12;H01G4/248;H01G4/30;H01G4/008 |
主分类号 |
H01G4/232 |
代理机构 |
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代理人 |
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主权项 |
1. An electronic component comprising:
an element body having a first principal surface and a second principal surface opposing each other in a first direction; a first terminal electrode disposed on the first principal surface side of the element body; and a second terminal electrode disposed on the second principal surface side of the element body, wherein the first terminal electrode includes: a first sintered metal layer formed on the first principal surface; and a first plating layer formed on the first sintered metal layer and including base metal, and the second terminal electrode includes: a second sintered metal layer formed on the second principal surface; a second plating layer formed on the second sintered metal layer and including base metal; and a solder layer formed on the second plating layer and including Sn and a metal having a higher melting point than the melting point of Sn. |
地址 |
Tokyo JP |