发明名称 CONDUCTIVE STRIP BASED MASK FOR METALLIZATION OF SEMICONDUCTOR DEVICES
摘要 Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.
申请公布号 US2017092790(A1) 申请公布日期 2017.03.30
申请号 US201514866843 申请日期 2015.09.25
申请人 Harder Nils-Peter 发明人 Harder Nils-Peter
分类号 H01L31/0224;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor device, the method comprising: forming a first semiconductor region; forming a first metal region over the first semiconductor region; placing a first conductive strip over a first portion of the first metal region, wherein the first conductive strip is formed over the first semiconductor region; bonding a contacting portion of the first conductive strip to the first portion the first metal region to electrically connect the first conductive strip to the first metal region; and forming a first conductive contact over the first semiconductor region, wherein the forming comprises etching a second portion of the first metal region and wherein the first conductive strip inhibits etching of the first portion of the first metal region.
地址 San Jose CA US