发明名称 |
CONDUCTIVE STRIP BASED MASK FOR METALLIZATION OF SEMICONDUCTOR DEVICES |
摘要 |
Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell. |
申请公布号 |
US2017092790(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201514866843 |
申请日期 |
2015.09.25 |
申请人 |
Harder Nils-Peter |
发明人 |
Harder Nils-Peter |
分类号 |
H01L31/0224;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, the method comprising:
forming a first semiconductor region; forming a first metal region over the first semiconductor region; placing a first conductive strip over a first portion of the first metal region, wherein the first conductive strip is formed over the first semiconductor region; bonding a contacting portion of the first conductive strip to the first portion the first metal region to electrically connect the first conductive strip to the first metal region; and forming a first conductive contact over the first semiconductor region, wherein the forming comprises etching a second portion of the first metal region and wherein the first conductive strip inhibits etching of the first portion of the first metal region. |
地址 |
San Jose CA US |