发明名称 |
BONDING WIRE FOR SEMICONDUCTOR DEVICE |
摘要 |
There is provided a bonding wire for a semiconductor device including a coating layer having Pd as a main component on a surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on a surface of the coating layer, the bonding wire further improving 2nd bondability on a Pd-plated lead frame and achieving excellent ball bondability even in a high-humidity heating condition. The bonding wire for a semiconductor device including the coating layer having Pd as a main component on the surface of the Cu alloy core material and the skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at% at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in the 2nd bondability and excellent ball bondability in the high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at% to 75 at%. |
申请公布号 |
EP3147938(A1) |
申请公布日期 |
2017.03.29 |
申请号 |
EP20150882901 |
申请日期 |
2015.12.28 |
申请人 |
Nippon Micrometal Corporation;Nippon Steel & Sumikin Materials Co., Ltd. |
发明人 |
YAMADA, Takashi;ODA, Daizo;OISHI, Ryo;UNO, Tomohiro |
分类号 |
H01L21/60 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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