发明名称 SEMICONDUCTOR DEVICE AND POWER CONVERSION APPARATUS USING SAME
摘要 A semiconductor device, including: a direct current power source; a reference potential; first and second arm circuits connected in series between the reference potential and the direct current; and a load inductor connected to a connection point between the first arm circuit and the second arm circuit, wherein the first arm circuit includes: a first switching device; and multiple first diodes connected in parallel to a current path of the first switching device, the second arm circuit includes: a second switching device; and multiple second diodes connected in parallel to a current path of the second switching device, a forward direction of the first and second diodes is a direction from the reference potential to the direct current power source, all of the first and second diodes are Si diodes or SiC diodes, and each of distances between the multiple first diodes and an output terminal of the direct current power source is different.
申请公布号 EP2903149(A4) 申请公布日期 2017.03.29
申请号 EP20120885312 申请日期 2012.09.28
申请人 Hitachi, Ltd. 发明人 OHNISHI, Masami
分类号 H02M7/537;H01F17/00;H01L25/18;H01L29/861;H01L49/02;H02M1/00;H02M7/00;H02M7/538;H03K17/16 主分类号 H02M7/537
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