Method for producing anodic porous alumina, method for producing molded article having microscopic pattern on surface, and molded article having microscopic pattern on surface

摘要

This method for producing anodic porous alumina such that an oxide coating film having a plurality of minute pores is formed at the surface of an aluminum substrate is characterized by containing: a step (a) for immersing the aluminum substrate in an electrolytic liquid resulting from mixing a plurality of acids; a step (b) for imposing a voltage on the aluminum substrate immersed in the electrolytic liquid; a step (c) for holding the aluminum substrate in the state of being immersed in the electrolytic liquid essentially without imposing a voltage on the aluminum substrate; and a step (d) for alternately repeating step (b) and step (c). By means of the present invention, it is possible using a simple device and with few steps to provide a method that easily produces anodic porous alumina such that an oxide coating film having a plurality of minute pores is formed at the surface of an aluminum substrate.

主权项

1. A method for producing anodic porous alumina where an oxide layer having a plurality of pores is formed on an aluminum substrate surface, comprising:
step (a) for immersing an aluminum substrate in an electrolyte containing two or more acids, wherein the two or more acids include oxalic acid and phosphoric acid; step (b) for applying a voltage on the aluminum substrate immersed in the electrolyte; step (c) for keeping the aluminum substrate immersed in the electrolyte while applying substantially no voltage on the aluminum substrate; and step (d) for alternately repeating steps (b) and (c), wherein the temperature of the electrolyte is at least 10° C. but lower than 25° C., and the phosphoric acid concentration (M) (mol/L) and time (T) (min.) for keeping the aluminum substrate immersed in the electrolyte are set to satisfy the formulas (1) and (2) below, and the time (T) indicates time (min.) per etching treatment on the aluminum substrate in the step (c),
1≦T≦90  (1)−90(2M−1)≦T  (2).