发明名称 Apparatus for performing signal driving with aid of metal oxide semiconductor field effect transistor
摘要 An apparatus for performing signal driving with aid of MOSFET and an associated IC are provided, where the apparatus includes a PMOSFET coupled between a predetermined voltage level and a terminal, and further includes an NMOSFET coupled between the predetermined voltage level and the terminal. The PMOSFET is arranged for selectively driving a signal that passes through the terminal. In addition, the NMOSFET is arranged for selectively driving the signal. Additionally, the apparatus further includes another NMOSFET coupled between another predetermined voltage level and the terminal, wherein the other NMOSFET is arranged for selectively driving the signal. More particularly, the PMOSFET, the NMOSFET, and the other NMOSFET does not drive the signal at the same time. For example, each of the PMOSFET, the NMOSFET, and the other NMOSFET selectively drives the signal to have one of a plurality of logical states.
申请公布号 US9608624(B2) 申请公布日期 2017.03.28
申请号 US201414549552 申请日期 2014.11.21
申请人 MEDIATEK INC. 发明人 Chen Shang-Pin
分类号 H03K3/00;H03K17/687;H03K19/0948 主分类号 H03K3/00
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. An apparatus for performing signal driving with aid of Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the apparatus comprising: a P-type MOSFET (PMOSFET), coupled between a predetermined voltage level and a terminal, arranged for selectively driving a signal, wherein the signal passes through the terminal; an N-type MOSFET (NMOSFET), coupled between the predetermined voltage level and the terminal, arranged for selectively driving the signal; and another NMOSFET, coupled between another predetermined voltage level and the terminal, arranged for selectively driving the signal; wherein the PMOSFET, the NMOSFET, and the other NMOSFET does not drive the signal at a same time.
地址 Hsin-Chu TW