N-type thin film transistor

摘要

An N-type thin film transistor includes an insulating substrate, a semiconductor carbon nanotube layer, an MgO layer, a functional dielectric layer, a source electrode, a drain electrode, and a gate electrode. The semiconductor carbon nanotube layer is located on the insulating substrate. The source electrode and the drain electrode electrically connect the semiconductor carbon nanotube layer, wherein the source electrode and the drain electrode are spaced from each other, and a channel is defined in the semiconductor carbon nanotube layer between the source electrode and the drain electrode. The MgO layer is located on the semiconductor carbon nanotube layer. The functional dielectric layer covers the MgO layer. The gate electrode is located on the functional dielectric layer.

主权项

1. An N-type thin film transistor, comprising:
an insulating substrate; a semiconductor carbon nanotube layer located on the insulating substrate; a source electrode and a drain electrode electrically connected to the semiconductor carbon nanotube layer; wherein the source electrode and the drain electrode are spaced from each other, and a channel is defined in the semiconductor carbon nanotube layer between the source electrode and the drain electrode; an MgO layer on the semiconductor carbon nanotube layer; a functional dielectric layer covering the MgO layer; and a gate electrode on the functional dielectric layer.