| 发明名称 | Method of manufacturing a semiconductor device having a rectifying junction at the side wall of a trench | ||
| 摘要 | A method for forming a field-effect semiconductor device includes: providing a wafer having a main surface and a first semiconductor layer of a first conductivity type; forming at least two trenches from the main surface partly into the first semiconductor layer so that each of the at least two trenches includes, in a vertical cross-section substantially orthogonal to the main surface, a side wall and a bottom wall, and that a semiconductor mesa is formed between the side walls of the at least two trenches; forming at least two second semiconductor regions of a second conductivity type in the first semiconductor layer so that the bottom wall of each of the at least two trenches adjoins one of the at least two second semiconductor regions; and forming a rectifying junction at the side wall of at least one of the at least two trenches. | ||
| 申请公布号 | US9608092(B2) | 申请公布日期 | 2017.03.28 |
| 申请号 | US201514822267 | 申请日期 | 2015.08.10 |
| 申请人 | Infineon Technologies AG | 发明人 | Konrath Jens;Schulze Hans-Joachim;Rupp Roland;Werner Wolfgang;Pfirsch Frank |
| 分类号 | H01L29/80;H01L29/66;H01L29/78;H01L29/47;H01L29/04;H01L29/16;H01L29/812;H01L29/267;H01L29/872 | 主分类号 | H01L29/80 |
| 代理机构 | Murphy, Bilak & Homiller, PLLC | 代理人 | Murphy, Bilak & Homiller, PLLC |
| 主权项 | 1. A method for forming a field-effect semiconductor device, the method comprising: providing a wafer comprising a main surface and a first semiconductor layer of a first conductivity type; forming at least two trenches from the main surface partly into the first semiconductor layer so that each of the at least two trenches comprises, in a vertical cross-section substantially orthogonal to the main surface, a side wall and a bottom wall, and that a semiconductor mesa is formed between the side walls of the at least two trenches; forming at least two second semiconductor regions of a second conductivity type in the first semiconductor layer so that the bottom wall of each of the at least two trenches adjoins one of the at least two second semiconductor regions; and forming a rectifying junction at the side wall of at least one of the at least two trenches, wherein the first semiconductor layer comprises a first semiconductor material, wherein forming the rectifying junction comprises at least one of: forming a Schottky-contact forming layer on the side wall; andforming a hetero junction on the side wall. | ||
| 地址 | Neubiberg DE | ||