Physical vapor deposition RF plasma shield deposit control

摘要

Methods and apparatus for processing a substrate in a physical vapor deposition (PVD) chamber are provided herein. In some embodiments, a process kit shield used in a substrate processing chamber may include a shield body having an inner surface and an outer surface, a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust a bias voltage of the process kit shield, a cavity formed on the outer surface of the shield body, and one or more magnets disposed within the cavity.

主权项

1. A process kit shield used in a substrate processing chamber, comprising:
a shield body having an inner surface and an outer surface; a process kit shield impedance match device coupled between the shield body and ground, wherein the process kit shield impedance match device is configured to adjust an impedance of the process kit shield, wherein the process kit shield impedance match device includes a plurality of process kit shield impedance match devices disposed equidistantly from each other about the perimeter of the process kit shield, and wherein each of the plurality of process kit shield impedance match devices is separately coupled to the shield body; and a cavity formed on the outer surface of the shield body configured to support one or more magnets when disposed therein.