发明名称 Heat treatment apparatus and heat treatment method for heating substrate by irradiating substrate with flash of light
摘要 A flash heating part in a heat treatment apparatus includes 30 built-in flash lamps, and irradiates a semiconductor wafer held by a holder in a chamber with a flash of light. Thirty switching elements are provided in a one-to-one correspondence with the 30 flash lamps. Each of the switching elements defines the waveform of current flowing through a corresponding one of the flash lamps by intermittently supplying electrical charge thereto. Radiation thermometers measure an in-plane temperature distribution of the semiconductor wafer during flash irradiation. Based on the results of measurement with the radiation thermometers, a controller individually controls the operations of the 30 switching elements to individually define the light emission patterns of the 30 flash lamps.
申请公布号 US9607870(B2) 申请公布日期 2017.03.28
申请号 US201314142991 申请日期 2013.12.30
申请人 SCREEN Holdings Co., Ltd. 发明人 Kiyama Hiroki
分类号 F26B3/30;A45D20/40;H01L21/67;H01L21/324 主分类号 F26B3/30
代理机构 Ostrolenk Faber LLP 代理人 Ostrolenk Faber LLP
主权项 1. A heat treatment apparatus for heating a substrate by irradiating the substrate with a flash of light, comprising: a chamber for receiving a substrate therein; a holder for holding the substrate in said chamber; a plurality of flash lamps for irradiating the substrate held by said holder with a flash of light; a plurality of switching elements provided in a one-to-one correspondence with said flash lamps and each defining the waveform of current flowing through a corresponding one of said flash lamps; and a light emission controller for individually controlling the operations of said switching elements to individually define the light emission patterns of said flash lamps; further comprising a plurality of illuminance sensors for measuring the illuminances of different regions, respectively, of the arrangement of said flash lamps, wherein said light emission controller controls the operations of said switching elements, based on results of measurement with said illuminance sensors.
地址 Kyoto JP