| 摘要 |
Provided is an adhesive tape for protecting a semiconductor wafer surface, wherewith no lifting occurs in particular when pasted and left on a semiconductor wafer having metal bumps, allowing the semiconductor wafer to be ground into a thin film with no infiltration of dust or water when grinding the back surface of the semiconductor wafer, and capable of being peeled without cracking the semiconductor wafer or leaving an adhesive residue. The adhesive tape for protecting the semiconductor wafer surface has at least an adhesive layer and a base material film. The adhesive layer does not harden by irradiation of an energy beam. The ratio B/A between an adhesive strength A measured at 23°C and at a peel speed of 50 mm/min against a SUS 280 polished surface and an adhesive strength B measured at a peel speed of 500 mm/min against the SUS 280 polished surface is less than 4.0. The adhesive strength measured at 23°C and at a peel speed of 300 mm/min against the SUS 280 polished surface is 1.2 to 4.5 N/25 mm, and the adhesive strength at 50°C is 50% of the adhesive strength at 23°C or weaker. |
