发明名称 |
WEIGHTING DEVICE, NEURAL NETWORK, AND OPERATING METHOD OF THE WEIGHTING DEVICE |
摘要 |
Provided are a weighting device that may be driven at a low voltage and is capable of embodying multi-level weights, a neural network, and a method of operating the weighting device. The weighting device includes a switching layer that may switch between a high resistance state and a low resistance state based on a voltage applied thereto and a charge trap material layer that traps or discharges charges according to a resistance state of the switching layer. The weighting device may be used for controlling a weight in a neural network. |
申请公布号 |
US2017083811(A1) |
申请公布日期 |
2017.03.23 |
申请号 |
US201615267600 |
申请日期 |
2016.09.16 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
CHO SEONGHO;YOO lnkyeong;KIM Hojung |
分类号 |
G06N3/04;H01L29/423;H01L29/788;G11C16/26;G11C16/04;G11C16/12;G11C16/14;H01L29/792;H01L29/10 |
主分类号 |
G06N3/04 |
代理机构 |
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代理人 |
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主权项 |
1. A weighting device comprising:
a substrate; a first transistor including,
a source region and a shared region spaced apart from each other on the substrate;a source electrode electrically connected to the source region;a first channel region between the source region and the shared region;a first gate insulation layer arranged on the first channel region;a charge trap material layer arranged on the first gate insulation layer;a switching layer arranged on the charge trap material layer and configured to switch between a low resistance state and a high resistance state; anda first gate electrode arranged on the switching layer; and a second transistor including,
a drain region spaced apart from the shared region on the substrate;a drain electrode electrically connected to the drain region;a second channel region between the shared region and the drain region;a second gate insulation layer arranged on the second channel region; anda second gate electrode arranged on the second gate insulation layer,wherein the charge trap material layer faces a portion of the shared region across the first gate insulation layer. |
地址 |
Suwon-si KR |