Atomic Layer Deposition Method

摘要

An atomic layer deposition apparatus includes a chamber including a plurality of regions; and a heating device respectively providing specific temperature ranges for the plurality of regions. By flowing precursor gases at different flow rates in the different regions, thin films can be simultaneously formed in the different regions having different film thicknesses.

主权项

1. An atomic layer deposition process, comprising:
providing a chamber having a plurality of regions; and injecting at least two depositing materials into respective ones of the plurality of regions to form a first thin film having a first thickness on a first substrate in a first region of the plurality of regions while simultaneously forming a second film having a second thickness on a second substrate in a second region of the plurality of regions, the second region being vertically offset from the first region.