Storage Capacitors for Displays and Methods for Forming the Same

摘要

Embodiments provided herein describe storage capacitors for active matrix displays and methods for making such capacitors. A substrate is provided. A bottom electrode is formed above the substrate. A dielectric layer is formed above the bottom electrode. A top electrode is formed above the dielectric layer. A layer including an amorphous or crystalline material may be formed between the dielectric layer and the top electrode. The bottom electrode may have a thickness of at least 1000 Å, be formed in a gaseous environment of at least 95% argon, and/or not undergo an annealing process before the formation of a dielectric layer above the bottom electrode. The dielectric layer may include a nitrided high-k dielectric material.

主权项

1. A method for forming a storage capacitor for an active matrix display, the method comprising:
providing a substrate; forming a bottom electrode above the substrate; forming a dielectric layer above the dielectric layer, wherein the dielectric layer comprises a high-k dielectric material; forming an intermediate layer above the dielectric layer, wherein the intermediate layer comprises an amorphous or micro-crystalline material; and forming a top electrode above the intermediate layer.