发明名称 INTEGRATED MEMS INERTIAL SENSING DEVICE
摘要 An integrated MEMS inertial sensing device can include a MEMS inertial sensor with a drive loop configuration overlying a CMOS IC substrate. The CMOS IC substrate can include an AGC loop circuit coupled to the MEMS inertial sensor. The AGC loop acts in a way such that generated desired signal amplitude out of the drive signal maintains MEMS resonator velocity at a desired frequency and amplitude. A benefit of the AGC loop is that the charge pump of the HV driver inherently includes a ‘time constant’ for charging up of its output voltage. This incorporates the Low pass functionality in to the AGC loop without requiring additional circuitry.
申请公布号 US2017082438(A1) 申请公布日期 2017.03.23
申请号 US201615365851 申请日期 2016.11.30
申请人 mCube Inc. 发明人 RASTEGAR ALI J.;BHANDARI SANJAY
分类号 G01C19/5776 主分类号 G01C19/5776
代理机构 代理人
主权项
地址 San Jose CA US