| 发明名称 |
INTEGRATING DIVERSE SENSORS IN A SINGLE SEMICONDUCTOR DEVICE |
| 摘要 |
In some embodiments a method of manufacturing a sensor system can comprise forming a first structure having a substrate layer and a first sensor that is positioned on a first side of the substrate layer, bonding a cap structure over the first sensor on the first side of the substrate layer, and depositing a first dielectric layer over the cap structure. After bonding the cap structure and depositing the first dielectric layer, a second sensor is fabricated on the first dielectric layer. The second sensor includes material that would be adversely affected at a temperature that is used to bond the cap structure to the first side of the substrate layer. |
| 申请公布号 |
US2017081174(A1) |
申请公布日期 |
2017.03.23 |
| 申请号 |
US201514861886 |
申请日期 |
2015.09.22 |
| 申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
LIU LIANJUN;MONK DAVID J. |
| 分类号 |
B81B7/00;H01L43/02;H01L43/12;B81C1/00 |
主分类号 |
B81B7/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a sensor system comprising:
forming a first structure having a substrate layer and a first sensor, the first sensor being positioned on a first side of the substrate layer; bonding a cap structure over the first sensor on the first side of the substrate layer; depositing a first dielectric layer over the cap structure; after bonding the cap structure and depositing the first dielectric layer, fabricating a second sensor on the first dielectric layer, wherein the second sensor includes components that would be damaged at a temperature that is used to bond the cap structure to the first side of the substrate layer. |
| 地址 |
AUSTIN TX US |
