METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE AND APPARATUS FOR SILICON CARBIDE EPITAXIAL GROWTH

摘要

This method for manufacturing a silicon carbide epitaxial substrate comprises: preheating nitrogen gas prior to introducing the nitrogen gas into a reactor containing a silicon carbide single crystal substrate; and introducing a gas mixture including carrier gas, raw gas, nitrogen gas, and ammonia gas into the reactor, and then epitaxially growing a nitrogen-doped silicon carbide layer on the silicon carbide single crystal substrate.