| 摘要 |
A solid-state imaging device includes a photodetecting unit, a row control unit, a column control unit, and a signal readout unit. The photodetecting unit includes M×N pixel units P(1,1) to P(M,N) two-dimensionally arrayed in M rows and N columns. Each pixel unit P(m,n) includes a photodiode PD, an amplifying transistor Tr1, a transfer transistor Tr2, a readout transistor Tr3, a first initialization transistor Tr4, and a second initialization transistor Tr5. One of the transfer transistor Tr2 and the first initialization transistor Tr4 performs an on/off operation based on a control signal output from the row control unit, and the other performs an on/off operation based on a control signal output from the column control unit. Thus, a solid-state imaging device capable of setting an accumulation period of various patterns different for each pixel is realized. |
