| 摘要 |
The present invention is a method for evaluating an SOI substrate, including the steps of: forming a device onto a measuring SOI substrate, and on the measuring SOI substrate, previously determining a relationship between an interface state density and a leakage power upon application of radio-frequency, or converting the interface state density to a resistance followed by previously determining a relationship between the converted resistance and the leakage power; measuring an interface state density of the evaluation target SOI substrate to determine the interface state density or a resistance converted from the interface state density; evaluating a leakage power of the evaluation target SOI substrate from the measured interface state density of the evaluation target SOI substrate on the basis of the previously determined relationship between the interface state density and the leakage power, or from a resistance converted from the measured interface state density of the evaluation target SOI substrate on the basis of the previously determined relationship between the resistance and the leakage power. This makes it possible to evaluate a substrate suited for radio-frequency in a simpler manner as possible without measuring radio-frequency characteristics actually. |
