| 发明名称 |
Selective nitride slurries with improved stability and improved polishing characteristics |
| 摘要 |
The invention provides a chemical-mechanical polishing composition comprising, consisting essentially of, or consisting of (a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water, wherein the polishing composition has a pH of about 3 to about 8. The invention further provides a method of polishing a substrate with the polishing composition. |
| 申请公布号 |
US9597768(B1) |
申请公布日期 |
2017.03.21 |
| 申请号 |
US201514849066 |
申请日期 |
2015.09.09 |
| 申请人 |
Cabot Microelectronics Corporation |
发明人 |
Pandey Prativa;Chang Juyeon;Reiss Brian |
| 分类号 |
H01L21/302;H01L21/461;B24B37/04;C09G1/02 |
主分类号 |
H01L21/302 |
| 代理机构 |
|
代理人 |
Omholt Thomas;Wilson Erika;Koszyk Francis J. |
| 主权项 |
1. A chemical-mechanical polishing composition comprising:
(a) about 0.01 wt. % to about 1 wt. % of wet-process ceria, (b) about 10 ppm to about 200 ppm of a cationic polymer comprising quaternary amino groups, (c) about 10 ppm to about 2000 ppm of a non-fluorinated nonionic surfactant, (d) an amino acid, and (e) water,wherein the polishing composition has a pH of about 3 to about 8. |
| 地址 |
Aurora IL US |
