Semiconductor device having asymmetric fin-shaped pattern

摘要

Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film contacting at least a portion of the first fin-shaped pattern. The first fin-shaped pattern includes a lower portion of the first fin-shaped pattern contacting the field insulating film; an upper portion of the first fin-shaped pattern not contacting the field insulating film; a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; and a first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern. The first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line.

主权项

1. A semiconductor device, comprising:
a first fin-shaped pattern including first and second sidewalls facing one another; and a field insulating film contacting at least a portion of the first fin-shaped pattern, wherein the first fin-shaped pattern comprises:
a lower portion of the first fin-shaped pattern contacting the field insulating film;an upper portion of the first fin-shaped pattern not contacting the field insulating film;a first boundary between the lower portion of the first fin-shaped pattern and the upper portion of the first fin-shaped pattern; anda first fin center line perpendicular to the first boundary and meeting the top of the upper portion of the first fin-shaped pattern; wherein the first sidewall of the upper portion of the first fin-shaped pattern and the second sidewall of the upper portion of the first fin-shaped pattern are asymmetric with respect to the first fin center line; wherein, in the upper portion of the first fin-shaped pattern having a first distance from the first boundary, a slope of the first sidewall is defined by a first slope, a slope of the second sidewall is defined by a second slope, a width between the first fin center line and the first sidewall is defined by a first width, and a width between the first fin center line and the second sidewall is defined by a second width; and wherein one of the first slope and the second slope are different from each other and the first width and the second width are different from each other.