Image sensors with photoelectric films

摘要

An image sensor with an organic photoelectric film for converting light into charge may be provided. The image sensor may include an array of image sensor pixels. Each image sensor pixel may include a charge-integrating pinned diode that collects photo-generated charge from the photoelectric film during an integration period. An anode electrode may be coupled to an n+ doped charge injection region in the charge-integrating pinned diode and may be used to convey the photo-generated charge from the photoelectric film to the charge-integrating pinned diode. Upon completion of a charge integration cycle, a first transfer transistor gate may be pulsed to move the charge from the charge-integrating pinned diode to a charge-storage pinned diode. The charge may be transferred from the charge-storage pinned diode to a floating diffusion node for readout by pulsing a gate of a second charge transfer transistor.

主权项

1. An image sensor pixel array having at least one pixel circuit, wherein the at least one pixel circuit comprises:
an organic photoelectric film configured to convert incident photons into photo-generated charge; a charge-integrating pinned diode configured to collect the photo-generated charge; a conductive electrode electrically coupled between the organic photoelectric film and the charge-integrating pinned diode, wherein the conductive electrode is configured to convey the photo-generated charge to the charge-integrating pinned diode, wherein the conductive electrode has first and second opposing sides; and an n+ type doped charge injector region formed in the charge-integrating pinned diode, wherein the n+ type doped charge injector region is directly connected to the conductive electrode, wherein the charge injector region is configured to receive the photo-generated charge from the conductive electrode and to input the photo-generated charge into the charge-integrating pinned diode, wherein the organic photoelectric film is formed on the first side of the conductive electrode, and wherein the n+ type doped charge injector region is formed on the second side of the conductive electrode.