Semiconductor device

摘要

A semiconductor device includes a first electrode, a first semiconductor layer of a first dopant type on the first electrode. A first region of the semiconductor device includes a second semiconductor layer of the second dopant type on the first semiconductor layer, a third semiconductor layer of the first dopant type on the second semiconductor layer, and a second electrode extending though the second and third semiconductor layers and inwardly of the first semiconductor layer. A second region of the semiconductor device includes an insulating layer over the first semiconductor layer, a fourth semiconductor layer of the first or second dopant type on the insulating layer, a fifth semiconductor layer of a different dopant type on the insulating layer and surrounding the fourth semiconductor layer, and a sixth semiconductor layer of the same dopant type on the insulation layer and surrounding the fifth semiconductor layer.

主权项

1. An integrated circuit, comprising;
an element region between a first electrode and a third electrode in a first direction; a second electrode electrically connected to an element in the element region; a first diode adjacent to the element region and including a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type adjacent to the first semiconductor region in a second direction crossing the first direction, the first diode electrically connected to the second and third electrodes; and a second diode adjacent to the element region and including a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type, the second diode electrically connected to the second and third electrodes, wherein the element region is disposed between at least a portion of the first diode and the second diode in the second direction, and the second electrode includes a first portion disposed outside the element region.