| 发明名称 | Oxide definition (OD) gradient reduced semiconductor device | ||
| 摘要 | An integrated circuit (IC) semiconductor device has a high oxide definition (OD) density region, a low OD density region adjacent to the high OD density region, and dummy cells in the high OD density region and the low OD density region to smooth a density gradient between the high OD density region and the low OD density region. | ||
| 申请公布号 | US9601478(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201615045504 | 申请日期 | 2016.02.17 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Chuang Yi-Lin;Ku Chun-Cheng;Chien Chin-Her;Changchien Wei-Pin |
| 分类号 | H01L29/06;H01L27/02;G06F17/50 | 主分类号 | H01L29/06 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. An integrated circuit (IC) semiconductor device, comprising: a high oxide definition (OD) density region having a first OD density; a low OD density region adjacent to the high OD density region, the low OD density region having a second OD density; an intermediate OD density region between the high OD density region and the low OD density region, the intermediate OD density region having a third OD density; and a first set of dummy cells in the intermediate OD density region, the first set of dummy cells forming an OD density gradient between the high OD density region and the low OD density region. | ||
| 地址 | TW | ||