Method for producing semiconductor device

摘要

A method for producing a semiconductor device includes preparing a wafer having plural portions and having an insulator having plural openings thereon, forming an embedding member in each of the plural openings and on the insulator, removing at least a part of the embedding member, and planarizing the embedding member. The plural portions have a first portion and a second portion and each of the first portion and the second portion has a first region and a second region. The density of the openings in the first region is higher than that in the second region. The process of removing at least a part of the embedding member includes removing the embedding member positioned in the second region of the first portion, and removing the embedding member positioned in the second region of the second portion. A first removal amount and a second removal amount in the processes are different.

主权项

1. A method for producing a semiconductor device comprising:
preparing a wafer having a plurality of portions each of which serves as a semiconductor device and having an insulator having a plurality of openings on the plurality of respective portions; forming an embedding member in each of the plurality of openings and on the insulator; partly removing the embedding member formed on the insulator; and after the partly removing of the embedding member, planarizing the embedding member, wherein the plurality of portions have a first portion and a second portion positioned at an outer side of the wafer than the first portion, the first portion has a first region and a second region at a position different from a position of the first region, and the second portion has a third region and a fourth region at a position different from a position of the third region, the plurality of openings in the first portion are disposed in the first region with a density higher than a density in the second region, and the plurality of openings in the second portion are disposed in the third region with a density higher than a density in the fourth region, and the partly removing of the embedding member includes: a first removal process in which a part of the embedding member positioned in the second region and a part of the embedding member positioned in the fourth region are removed by etching using a first resist pattern as a mask; and a second removal process in which at least a part of the embedding member positioned in the second region is removed by etching using a second resist pattern as a mask while a third resist pattern is positioned on at least a part of the embedding member positioned in the fourth region, wherein a first removal amount in the partly removing of the embedding member positioned in the second region and a second removal amount in the partly removing of the embedding member positioned in the fourth region are different from each other.