Converting infrared light into broadband visible light at high efficiency using lanthanide-sensitized oxides

摘要

The present invention includes upconversion materials such as lanthanide-sensitized oxides that are useful for converting low-energy photons into high-energy photons. Because silicon-based solar cells have an intrinsic optical band-gap of 1.1 eV, low-energy photons having a wavelength longer than 1100 nm, e.g., infrared photons, cannot be absorbed by the solar cell and used for photovoltaic energy conversion. Only those photons that have an energy equal to or greater than the solar cell's band gap, e.g., visible photons, can be absorbed and used for photovoltaic energy conversion. The oxides described herein transform photons having an energy less than the energy of a solar cell's band gap into photons having an energy equal to or greater than the energy of the band gap. When these oxides are incorporated into a solar cell, they provide more photons for photovoltaic energy conversion than otherwise would be available in their absence. Nearly 10% of the infrared photons incident on these oxides are upconverted into visible photons. This upconversion efficiency is more than twice as large as the upconversion efficiency for NaYF4-based upconversion materials. The solar radiation energy conversion efficiency of a silicon-based solar cell will increase by 1.8% or greater by including the oxides described herein because they allow the solar cell to absorb and use are larger portion of the solar spectrum for photovoltaic energy conversion.

主权项

1. A doped oxide, comprising
A) an oxide host having:
i) a melting point greater than 1800 K; andii) a room temperature thermal conductivity lower than 45 W·m−1·K−1; and B) a dopant uniformly distributed in the oxide host, wherein the doped oxide is in the form of mesoporous microspheres having a diameter of about 10 to 50 μm, wherein the surface area of the mesoporous microspheres is about 1 to 200 m2/g, and wherein the mesoporous microspheres have a pore size of about 2 to 100 nm.