发明名称 |
Thin film transistor display panel and method for manufacturing the same |
摘要 |
A thin film transistor display panel including: a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor. |
申请公布号 |
US9601518(B2) |
申请公布日期 |
2017.03.21 |
申请号 |
US201514856405 |
申请日期 |
2015.09.16 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Moon Yeon Keon;Kano Masataka;Koo So Young;Kim Myoung Hwa;Lim Jun Hyung |
分类号 |
H01L29/12;H01L27/12;H01L29/786;H01L29/66;H01L29/423 |
主分类号 |
H01L29/12 |
代理机构 |
H.C. Park & Associates, PLC |
代理人 |
H.C. Park & Associates, PLC |
主权项 |
1. A thin film transistor display panel comprising:
a first insulating substrate; a first semiconductor disposed between the first insulating substrate and a first gate insulating layer; a gate electrode disposed on the first gate insulating layer, the gate electrode overlapping the first semiconductor; a second gate insulating layer disposed on the gate electrode; a second semiconductor disposed on the second gate insulating layer, the second semiconductor overlapping the gate electrode; an interlayer insulating layer disposed on the second semiconductor; and a source electrode and a drain electrode disposed on the interlayer insulating layer spaced apart from each other, the source electrode and the drain electrode connected to the first semiconductor and the second semiconductor. |
地址 |
Yongin-si KR |