| 发明名称 | Method of etching | ||
| 摘要 | A method of etching a feature in a substrate includes forming a mask structure over the substrate, the mask structure defining at least one re-entrant opening, etching the substrate through the opening to form the feature using a cyclic etch and deposition process, and removing the mask. | ||
| 申请公布号 | US9601341(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201414577442 | 申请日期 | 2014.12.19 |
| 申请人 | SPTS Technologies Limited | 发明人 | Ashraf Huma |
| 分类号 | H01L21/76;H01L21/3065;H01L21/033;H01L21/308;H01L21/02;H01L21/768;H01L23/48 | 主分类号 | H01L21/76 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A method of forming a feature in a substrate including the steps of: forming a mask structure over the substrate and directly on an upper surface, wherein the forming of the mask structure comprises forming a mask layer directly on the upper surface and forming an aperture through the mask layer such that a portion of the upper surface is circumscribed by an edge of the mask layer delimiting a bottom of the aperture and said portion of the upper surface is exposed via the aperture, and subsequently forming re-entrant structure that constricts access via the aperture to said portion of the upper surface by defining a re-entrant opening that is within the bounds of and is narrower in a horizontal direction than the aperture as viewed in plan; subsequently etching the substrate through the re-entrant opening using a cyclic etch and deposition process that forms, in the underlying structure, a feature having a maximum critical dimension (CD) in said horizontal direction which is smaller than the CD of the aperture in said horizontal direction; and removing the mask structure. | ||
| 地址 | Newport GB | ||