Semiconductor device and manufacturing method thereof

摘要

The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer.

主权项

1. A semiconductor device comprising:
a first transistor comprising:
a first gate electrode layer over an insulating surface;a gate insulating layer over the first gate electrode layer;a first oxide semiconductor layer over the first gate electrode layer; anda first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; a second transistor comprising:
a second gate electrode layer over the insulating surface;the gate insulating layer over the second gate electrode layer;a second source electrode layer and a second drain electrode layer over the gate insulating layer; anda second oxide semiconductor layer over the second gate electrode layer, the second source electrode layer and the second drain electrode layer; and a capacitor comprising:
a first electrode over the insulating surface;the gate insulating layer over the first electrode;a second electrode over the gate insulating layer; anda third oxide semiconductor layer over the second electrode, the third oxide semiconductor layer overlapping with the first electrode, wherein each of the second gate electrode layer, the gate insulating layer, the second source electrode layer, the second drain electrode layer, and the second oxide semiconductor layer has a light-transmitting property, and wherein the third oxide semiconductor layer is formed from the same material as the second oxide semiconductor layer.