Methods for post-epitaxial warp prediction and control

摘要

In one aspect, a method of predicting warp in a plurality of wafers after an epitaxial layer deposition process is provided. The method includes receiving, by a processor, a measured resistivity of a first wafer of the plurality of wafers, receiving, by the processor, a measured shape of the first wafer after at least one of a grinding process and an etching process, and calculating, using the processor, a change in wafer shape during the epitaxial layer deposition process. The method further includes superposing, using the processor, the calculated shape change onto the measured shape of the first wafer to determine a post-epitaxial wafer shape and calculating, using the processor, a post-epitaxial warp value based on the determined post-epitaxial wafer shape.

主权项

1. A method of controlling warp in a plurality of wafers that are subject to an epitaxial layer deposition process, the method comprising:
receiving, by a processor, a measured shape of a first wafer of the plurality of wafers after at least one of a grinding process and an etching process of the first wafer; predicting, using the processor, a warp value in the first wafer after the epitaxial layer deposition process, wherein predicting the warp value includes:
calculating, using the processor, a change in wafer shape during the epitaxial layer deposition process; andsuperposing, using the processor, the calculated shape change onto the measured shape of the first wafer to determine a post-epitaxial wafer shape; adjusting a simultaneous double side wafer grinder based on the predicted warp value; and grinding a second wafer of the plurality of wafers with the wafer grinder.