| 发明名称 | Semiconductor package | ||
| 摘要 | Provided is a semiconductor package. The semiconductor package includes: a first die that is a monolithic type die, a driver circuit and a low-side output power device formed in the first die; a second die disposed above the first die, the second die comprising a high-side output power device; and a first connection unit disposed between the first die and the second die. | ||
| 申请公布号 | US9601453(B2) | 申请公布日期 | 2017.03.21 |
| 申请号 | US201314104805 | 申请日期 | 2013.12.12 |
| 申请人 | Magnachip Semiconductor, Ltd. | 发明人 | Hebert Francois |
| 分类号 | H01L21/00;H01L23/00;H01L23/31;H01L23/495 | 主分类号 | H01L21/00 |
| 代理机构 | NSIP Law | 代理人 | NSIP Law |
| 主权项 | 1. A semiconductor package comprising: a monolithic type first die comprising a driver circuit and a low-side output power device connected to the driver circuit; a second die disposed above the first die, the second die comprising a high-side output power device; a first connection unit connecting a top of the first die and a bottom of the second die; and a second connection unit disposed on the second die. | ||
| 地址 | Cheongju-si KR | ||