| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
Certain embodiments provide a manufacturing method of a semiconductor device including: forming a first through-hole in a first insulation film provided on a semiconductor substrate; embedding a first copper and a first barrier metal, in this order, into the first through-hole, an etching rate of the first barrier metal being equal to or more than an etching rate of the first insulation film; forming a second insulation film on the first barrier metal and the first insulation film; forming a second through-hole by removing, using etching, the second insulation film on the first barrier metal, the first barrier metal, and the first insulation film which is neighboring the first barrier metal; and embedding a second copper into the second through-hole. |
| 申请公布号 |
US2017076958(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615254314 |
申请日期 |
2016.09.01 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
NISHIWAKI Junya |
| 分类号 |
H01L21/321;H01L23/532;H01L21/768 |
主分类号 |
H01L21/321 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a semiconductor device comprising:
forming a first through-hole in a first insulation film provided on a semiconductor substrate; embedding a first copper and a first barrier metal, in this order, into the first through-hole, an etching rate of the first barrier metal being equal to or more than an etching rate of the first insulation film; forming a second insulation film on the first barrier metal and the first insulation film; forming a second through-hole by removing, using etching, the second insulation film on the first barrier metal, the first barrier metal, and the first insulation film which is neighboring the first barrier metal; and embedding a second copper into the second through-hole. |
| 地址 |
Minato-ku JP |
