PARASITIC CHANNEL MITIGATION IN III-NITRIDE MATERIAL SEMICONDUCTOR STRUCTURES
摘要
Ill-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
申请公布号
WO2017044467(A1)
申请公布日期
2017.03.16
申请号
WO2016US50515
申请日期
2016.09.07
申请人
MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.
发明人
ROBERTS, John, Claassen;LINTHICUM, Kevin, J.;HANSON, Allen, W.;COOK, James, W., Jr.