| 发明名称 |
Nitride Semiconductor Light Emitting Element |
| 摘要 |
A nitride semiconductor light emitting element comprises a sapphire substrate, and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate. The nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate. The nitride semiconductor light emitting element is divided into a chip whose planarly-viewed shape is a square or a rectangle. A thickness of the sapphire substrate is 0.45 to 1 times an average length of sides of the planarly-viewed shape of the chip. |
| 申请公布号 |
US2017077351(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201415113014 |
申请日期 |
2014.01.21 |
| 申请人 |
Soko Kagaku Co., Ltd. |
发明人 |
Hirano Akira;Pernot Cyril;Inazu Tetsuhiko |
| 分类号 |
H01L33/32;H01L33/00;H01L33/16;H01L33/06;H01L33/26 |
主分类号 |
H01L33/32 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A nitride semiconductor light emitting element comprising:
a sapphire substrate; and a light emitting element structure portion that has a plurality of nitride semiconductor layers formed on the sapphire substrate, wherein the nitride semiconductor light emitting element is a back-surface-emitting type nitride semiconductor light emitting element that outputs light from the light emitting element structure portion to an outside of the element through the sapphire substrate, the nitride semiconductor light emitting element being divided into a chip whose planarly-viewed shape is a square or a rectangle, an average length of sides of the planarly-viewed shape of the chip is 400 μm or greater, and a thickness of the sapphire substrate is 0.45 to 1 times the average length. |
| 地址 |
Aichi JP |
