Laser-assisted atomic layer deposition of 2D metal chalcogenide films

摘要

Methods of forming 2D metal chalcogenide films using laser-assisted atomic layer deposition are disclosed. A direct-growth method includes: adhering a layer of metal-bearing molecules to the surface of a heated substrate; then reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous 2D film of the metal chalcogenide; then laser annealing the amorphous 2D film to form a crystalline 2D film of the metal chalcogenide, which can have the form MX or MX2, where M is a metal and X is the chalcogenide. An indirect growth method that includes forming an MO3 film is also disclosed.

主权项

1. A method of forming a substantially two-dimensional (2D) film of a metal chalcogenide on a surface of a substrate, the method comprising:
a) adhering a layer of metal-bearing molecules to the surface of a heated substrate using an atomic layer deposition (ALD) process; b) reacting the layer of metal-bearing molecules with a chalcogenide-bearing radicalized precursor gas delivered using a plasma to form an amorphous and substantially 2D film of the metal chalcogenide; and c) laser annealing the amorphous and substantially 2D film to form therefrom a substantially crystalline and substantially 2D film of the metal chalcogenide, wherein the metal chalcogenide can have the form MX or MX2, where M is a metal and X is a chalcogenide.