COMPOUND, RESIN, RESIST COMPOSITION OR RADIATION-SENSITIVE COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR PRODUCING AMORPHOUS FILM, MATERIAL FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, COMPOSTION FOR FORMING LITHOGRAPHIC UNDERLAYER FILM, METHOD FOR FORMING CIRCUIT PATTERN, AND PURIFICATION METHOD

摘要

A compound represented by formula (1) and/or a resin containing the compound as a structural component is used. (In formula (1), R1 is a C1-60 2n-valent group or a single bond; R2 through R5 each independently are a C1-10 linear, branched, or cyclic alkyl group, C6-10 aryl group, C2-10 alkenyl group, C1-30 alkoxy group, halogen atom, thiol group, hydroxyl group, or group in which a hydrogen atom of a hydroxyl group has been substituted by an acid-dissociable group, where at least one selected from R2 through R5 is a group in which a hydrogen atom of a hydroxyl group has been substituted by an acid-dissociable group; m2 and m3 each independently are an integer of 0-8, and m4 and m5 each independently are an integer of 0-9, where m2, m3, m4, and m5 are not simultaneously 0; n is an integer of 1-4; and p2 through p5 each independently are an integer of 0-2.)