PARTIALLY BIASED ISOLATION IN SEMICONDUCTOR DEVICE

摘要

Embodiments of a device are provided, including a semiconductor substrate including an active device area; a body region disposed in the semiconductor substrate within the active device area, wherein a channel is formed within the body region during operation; a doped isolation layer disposed in the semiconductor substrate underneath the active device area, the doped isolation layer including an opening positioned under the active device area; and a lightly-doped isolation layer disposed in the semiconductor substrate underneath the active device area, the lightly-doped isolation layer positioned at least within the opening and in electrical contact with the doped isolation layer, wherein the doped isolation layer and the lightly-doped isolation layer form a doped isolation barrier that extends across an entire lateral extent of the active device area.

主权项

1. A device comprising:
a semiconductor substrate including an active device area; a body region disposed in the semiconductor substrate within the active device area, wherein a channel is formed within the body region during operation; a doped isolation layer disposed in the semiconductor substrate underneath the active device area, the doped isolation layer including an opening positioned under the active device area; and a lightly-doped isolation layer disposed in the semiconductor substrate underneath the active device area, the lightly-doped isolation layer positioned at least within the opening and in electrical contact with the doped isolation layer, wherein the doped isolation layer and the lightly-doped isolation layer form a doped isolation barrier that extends across an entire lateral extent of the active device area.