SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor memory device according to an embodiment includes a laminated body. The laminated body is disposed above a semiconductor substrate. The laminated body includes a plurality of conductive layers and an interlayer insulating film. The interlayer insulating film is disposed between the plurality of conductive layers. A peripheral area of a semiconductor layer is surrounded by the laminated body. The semiconductor layer extends with a first direction as a longitudinal direction. A memory gate insulating film is disposed between the semiconductor layer and the laminated body. The memory gate insulating film includes a charge accumulation film. At least one of the interlayer insulating films disposed between the plurality of conductive layers include a first film and a second film. The first film has a first composition. The second film has a second composition different from the first composition.

主权项

1. A semiconductor memory device, comprising:
a semiconductor substrate; a laminated body disposed above the semiconductor substrate, the laminated body including a plurality of conductive layers and an interlayer insulating film, the interlayer insulating film being disposed between the plurality of conductive layers; a semiconductor layer whose peripheral area is surrounded by the laminated body, the semiconductor layer extending with a first direction as a longitudinal direction; and a memory gate insulating film disposed between the semiconductor layer and the laminated body, the memory gate insulating film including a charge accumulation film, wherein at least one of the interlayer insulating films disposed between the plurality of conductive layers include a first film and a second film, the first film having a first composition, the second film having a second composition different from the first composition.