| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A semiconductor memory device according to an embodiment includes: an insulating layer; a conductive layer stacked above the insulating layer in a first direction, the conductive layer having a second direction as a longitudinal direction and a third direction as a short direction; and a channel semiconductor layer extending in the first direction, and the conductive layer including a recessed portion narrowed in the third direction. |
| 申请公布号 |
US2017077119(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514960888 |
申请日期 |
2015.12.07 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
SAWABE Ryosuke;KITO Masaru |
| 分类号 |
H01L27/115;H01L23/535 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
an insulating layer; a conductive layer stacked above the insulating layer in a first direction, the conductive layer having a second direction as a longitudinal direction and a third direction as a short direction; and a channel semiconductor layer extending in the first direction, and the conductive layer including a recessed portion narrowed in the third direction. |
| 地址 |
Minato-ku JP |
