| 摘要 |
In one aspect a circuit including a switch transistor (101) and an auxiliary transistor (102) is disposed on an insulating layer. The switch transistor (101) includes a gate terminal (101G), a source terminal (101S), a drain terminal (101D) and a body terminal (101B). The auxiliary transistor (102) includes a gate terminal (102G), a source terminal (102S), and a drain terminal (102D). The body terminal (101B) of the switch transistor is coupled to one of the source terminal (102S) of the auxiliary transistor or the drain terminal (102D) of the auxiliary transistor, and the gate terminal (102G) of the auxiliary transistor is shorted to a low impedance node of the switch transistor. The source and the drain terminals (101S, 101D) of the switch transistor are specific examples of such a low impedance node of the switch transistor. Also described is a method of designing a circuit. |
