SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor substrate with: a drift layer; a base layer; and a collector layer and a cathode layer. In the semiconductor substrate, when a region operating as an IGBT device is an IGBT region and a region operating as a diode device is a diode region, the IGBT and diode regions are arranged alternately in a repetitive manner; a damaged region is arranged on a surface portion of the diode region in the semiconductor substrate. The IGBT and diode regions are demarcated by a boundary between the collector and cathode layers; and a surface portion of the IGBT region includes: a portion having the damaged region at a boundary side with the diode region; and another portion without the damaged region arranged closer to an inner periphery side relative to the boundary side.

主权项

1. A semiconductor device comprising:
a semiconductor substrate including:
a drift layer having a first conductivity type;a base layer having a second conductivity type that is arranged at a surface portion of the drift layer; anda collector layer having the second conductivity type and a cathode layer having the first conductivity type that are arranged at a side of the drift layer opposite to another side of the drift layer facing the base layer, wherein: when a region operating as an IGBT device in the semiconductor substrate is an IGBT region and a region operating as a diode device in the semiconductor substrate is a diode region, the IGBT region and the diode region are arranged alternately in a repetitive manner; a damaged region is arranged at a surface portion of the diode region in the semiconductor substrate; the IGBT region and the diode region are demarcated by a boundary between the collector layer and the cathode layer; and a surface portion of the IGBT region includes: a portion that has the damaged region, which has a length along a surface direction of the semiconductor substrate equal to or larger than the thickness of the semiconductor substrate, at a boundary side with the diode region; and another portion not having the damaged region that is arranged closer to an inner periphery side relative to the boundary side.