发明名称 SEMICONDUCTOR DEVICE, SEMICONDUCTOR CHIP, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 A semiconductor device includes a semiconductor chip including first to fourth pads, and first and second switches. The first switch includes first and second nodes coupled to the first and second pads and sends from the second node a current larger than a threshold flowing in from the first node. The second switch includes third and fourth nodes coupled to the third and fourth pads and sends from the fourth node a current larger than a threshold larger flowing in from the third node. The third and fourth nodes are not coupled to any nodes of high and low potentials of any circuit which receives the potentials to operate. A first wire is coupled to the first pad and the first conductor, and a second wire is coupled to the second pad and the second conductor.
申请公布号 US2017077060(A1) 申请公布日期 2017.03.16
申请号 US201615002117 申请日期 2016.01.20
申请人 Kabushiki Kaisha Toshiba 发明人 Hayashi Sachio
分类号 H01L23/00;H01L21/66;H01L27/02;H01L23/498 主分类号 H01L23/00
代理机构 代理人
主权项 1. A semiconductor device comprising: a substrate; terminals on the substrate; a first conductive line and a second conductive line provided on the substrate and electrically coupled to the terminals; and a semiconductor chip on the substrate comprising a circuit,a first pad and a second pad,a first switch element including a first node coupled to the first pad and the circuit and a second node coupled to the second pad and the circuit, and sending out from the second node via the first switch element a current of a magnitude larger than a first threshold that flows in from the first node,a third pad and a fourth pad, anda second switch element including a third node coupled to the third pad, a fourth node coupled to the fourth pad, the third node and the fourth node not coupled to any node of a high potential or any node of a low potential of any circuit in the semiconductor chip which receives the high potential and the low potential to operate, and sending out from the fourth node via a second switch element, a current of a magnitude larger than a second threshold that flows in from the third node; a first wire coupled to the first pad and the first conductive line; and a second wire coupled to the second pad and the second conductive line.
地址 Tokyo JP