| 发明名称 |
SEMICONDUCTOR DEVICE, ELECTRO-OPTICAL DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING ELECTRO-OPTICAL DEVICE, AND ELECTRONIC APPARATUS |
| 摘要 |
A first insulation layer includes a concave portion. A semiconductor layer includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer. A gate insulation layer covers the channel area. A gate electrode is disposed to be opposed to the channel area via the gate insulation layer. A first electrode is one of a source electrode and a drain electrode. A second electrode is the other of the source electrode and the drain electrode. |
| 申请公布号 |
US2017077148(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615363713 |
申请日期 |
2016.11.29 |
| 申请人 |
Seiko Epson Corporation |
发明人 |
Nakagawa Masashi |
| 分类号 |
H01L27/12;G02F1/1333;G02F1/1368;G02F1/1362;H01L29/786;H01L29/423 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first insulation layer which includes a concave portion; a semiconductor layer which includes a source area and a drain area, and a channel area disposed at the concave portion of the first insulation layer; a gate insulation layer which covers the channel area; a gate electrode which is disposed so as to be opposed to the channel area via the gate insulation layer; a first electrode which is one of a source electrode and a drain electrode; and a second electrode which is the other of the source electrode and the drain electrode. |
| 地址 |
Tokyo JP |
