INTEGRATED CIRCUIT COMPOSED OF TUNNEL FIELD-EFFECT TRANSISTORS AND METHOD FOR MANUFACTURING SAME

摘要

The present invention provides an integrated circuit formed of tunneling field-effect transistors that includes a first tunneling field-effect transistor in which one of a first P-type region and a first N-type region operates as a source region and the other one operates as a drain region; and a second tunneling field-effect transistor in which one of a second P-type region and a second N-type region operates as a source region and the other one operates as a drain region, the first and second tunneling field-effect transistors being formed in one active region to have the same polarity, the first P-type region and the second N-type region being formed adjacently, the adjacent first P-type region and second N-type region being electrically connected through metal semiconductor alloy film.

主权项

1. An integrated circuit formed of tunneling field-effect transistors, the integrated circuit comprising:
a first tunneling field-effect transistor in which one of a first P-type region and a first N-type region operates as a source region and the other one operates as a drain region; and a second tunneling field-effect transistor in which one of a second P-type region and a second N-type region operates as a source region and the other one operates as a drain region, the first tunneling field-effect transistor and the second tunneling field-effect transistor being formed in one active region to have a same polarity, the first P-type region and the second N-type region being formed adjacently, the first P-type region and the second N-type region that are adjacent being electrically connected with each other through a metal semiconductor alloy film, wherein the metal semiconductor alloy film is formed in a manner to bridge the first P-type region and the second N-type region that are formed down to predetermined formation depths from a surface of a semiconductor layer and are disposed in a manner to face each other, and the metal semiconductor alloy film is formed down to a depth equal to or deeper than the formation depths of the first P-type region and the second N-type region from a position of the surface of the semiconductor layer.