| 发明名称 |
METHOD OF PROCESSING A SUBSTRATE |
| 摘要 |
The invention relates to a method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface. The method comprises applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of hole regions in the substrate, each hole region extending from the first surface towards the second surface. Each hole region is composed of a modified region and a space in the modified region open to the first surface. The method further comprises removing substrate material along the at least one division line where the plurality of hole regions has been formed. |
| 申请公布号 |
US2017076983(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615250017 |
申请日期 |
2016.08.29 |
| 申请人 |
DISCO Corporation |
发明人 |
Morikazu Hiroshi;Priewasser Karl Heinz;Hattori Nao |
| 分类号 |
H01L21/78;H01S5/02;H01L33/00;H01L21/304;H01L23/544;H01L21/428 |
主分类号 |
H01L21/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of processing a substrate, having a first surface with at least one division line formed thereon and a second surface opposite the first surface, the method comprising:
applying a pulsed laser beam to the substrate from the side of the first surface, at least in a plurality of positions along the at least one division line, so as to form a plurality of hole regions in the substrate, each hole region extending from the first surface towards the second surface, wherein each hole region is composed of a modified region and a space in the modified region open to the first surface; and removing substrate material along the at least one division line where the plurality of hole regions has been formed. |
| 地址 |
Tokyo JP |
