METHOD OF MANUFACTURING SEMICONDUCTOR UNIT AND THE SEMICONDUCTOR UNIT

摘要

In a solid-state imaging device including a plurality of pixels each pixel including a plurality of photodiodes, it is prevented that an incidence angle of incident light on the solid-state imaging device becomes large in a pixel in an end of the solid-state imaging device, causing a difference in output between the two photodiodes in the pixel, and thus autofocus detection accuracy is deteriorated. Photodiodes extending in a longitudinal direction of a pixel allay section are provided in each pixel. The photodiodes in the pixel are arranged in a direction orthogonal to the longitudinal direction of the pixel allay section.

主权项

1. A semiconductor unit including a solid-state imaging device including a plurality of pixels each including two photodiodes, the semiconductor unit comprising:
a semiconductor substrate; a pixel array section extending in a first direction along a main surface of the semiconductor substrate over the main surface of the semiconductor substrate; the pixels provided in the pixel array section; and the two photodiodes provided in the main surface of the semiconductor substrate in each of the pixels, wherein the two photodiodes are arranged in a second direction orthogonal to the first direction in the pixel.