| 摘要 |
Provided is a method for preparing a substrate, comprising the following steps: step I. depositing an amorphous silicon layer (12) on a base material (11); step II. depositing a silicon dioxide layer (17) having a first thickness (D1) on the amorphous silicon layer (12); and step III. etching the silicon dioxide layer (17) until the thickness (D1) thereof is reduced to a second thickness (D2). According to the method, the silicon dioxide layer (17) having a required thickness can be prepared on the amorphous silicon layer (12). When an excimer laser annealing is performed, the prepared silicon dioxide layer (17) can sufficiently suppress protuberance at the crystal boundary of a polycrystalline silicon layer (18), thereby enabling the roughness of a prepared semiconductor layer to be decreased. |
