| 发明名称 |
THREE DIMENSIONAL MEMORY DEVICE HAVING ISOLATED PERIPHERY CONTACTS THROUGH AN ACTIVE LAYER EXHUME PROCESS |
| 摘要 |
A three dimensional memory device is described having an array region and a periphery region. The array region has a three dimensional stack of storage cells. The periphery region has contacts that extend from above the three dimensional stack of storage cells to below the three dimensional stack of storage cells. The periphery region is substantially devoid of conducting and/or semi-conducting layers of the three dimensional stack of storage cells. |
| 申请公布号 |
US2017077117(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201514853783 |
申请日期 |
2015.09.14 |
| 申请人 |
VEGUNTA SRI SAI SIVAKUMAR;DAMARLA GOWRISANKAR;ZHOU JIAN |
发明人 |
VEGUNTA SRI SAI SIVAKUMAR;DAMARLA GOWRISANKAR;ZHOU JIAN |
| 分类号 |
H01L27/115;G06F3/06;H01L21/311;H01L21/768;H01L23/528;H01L21/3213 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An apparatus, comprising:
a three dimensional memory device comprising an array region and a periphery region, said array region comprising a three dimensional stack of storage cells, said periphery region comprising contacts extending from above the three dimensional stack of storage cells to below the three dimensional stack of storage cells, the periphery region being substantially devoid of conducting and/or semi-conducting layers of the three dimensional stack of storage cells, the periphery region composed of first dielectric having openings filled with second dielectric. |
| 地址 |
Boise ID US |
