| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF |
| 摘要 |
According to an embodiment, a semiconductor memory device includes a plurality of first conductive layers disposed above a substrate in a laminating direction. A stepped wiring area includes a second conductive layer electrically connected to the first conductive layer. The second conductive layer has an end portion as a contact connection portion. A contact plug is connected to the contact connection portion. The contact plug extends in the laminating direction. The contact plug includes a first member and a second member. The first member extends in the laminating direction. The second member extends in a direction intersecting with the laminating direction inside the contact connection portion. |
| 申请公布号 |
US2017077026(A1) |
申请公布日期 |
2017.03.16 |
| 申请号 |
US201615077305 |
申请日期 |
2016.03.22 |
| 申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
OKAWA Takamasa;Kobayashi Shigeki;Sakamoto Kei;Sawabe Ryosuke |
| 分类号 |
H01L23/528;H01L23/522;H01L21/768;H01L27/115 |
主分类号 |
H01L23/528 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device, comprising:
a plurality of first conductive layers disposed above a substrate in a laminating direction; a wiring portion that includes a second conductive layer electrically connected to the first conductive layer, the second conductive layer having an end portion as a contact connection portion; and a contact plug connected to the contact connection portion, the contact plug extending in the laminating direction, wherein the contact plug includes a first member and a second member, the first member extending in the laminating direction, the second member extending in a direction intersecting with the laminating direction inside the contact connection portion. |
| 地址 |
Minato-ku JP |
