发明名称 SEMICONDUCTOR DEVICE, EMBEDDED CAPACITOR UNIT, SEMICONDUCTOR PACKAGE, AND METHOD OF MANUFACTURING EMBEDDED CAPACITOR UNIT
摘要 Jitter that becomes a problem in a semiconductor part which performs high-speed signal processing is reduced. A semiconductor device includes a heat-resistant metal plate, a capacitor part having a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate, a semiconductor chip fixed on the capacitor part, a wire for electrically connecting a lead frame to the semiconductor chip and the upper electrode, and a mold part in which at least the capacitor part and the semiconductor chip are buried. The semiconductor chip, the electrode, the metal plate, and the like are electrically connected with each other via first, second, and third wires.
申请公布号 US2017077019(A1) 申请公布日期 2017.03.16
申请号 US201615358257 申请日期 2016.11.22
申请人 Panasonic Intellectual Property Management Co., Ltd. 发明人 SUGAYA YASUHIRO;KATSUMURA HIDENORI;TOKUNAGA SHINYA
分类号 H01L23/495 主分类号 H01L23/495
代理机构 代理人
主权项 1. A semiconductor device comprising: a heat-resistant metal plate; a capacitor part having at least a lower electrode, a sintered dielectric part, and an upper electrode that are formed on one or more surfaces of the heat-resistant metal plate; a semiconductor chip fixed on the capacitor part; a lead frame; a wire for electrically connecting the semiconductor chip to the upper electrode; and a mold part in which at least the capacitor part and the semiconductor chip are buried, wherein the semiconductor chip and the upper electrode are electrically connected with each other via a first wire, the semiconductor chip and the lower electrode are electrically connected with each other via a second wire, and the upper electrode and the lead frame are electrically connected with each other via a third wire.
地址 Osaka JP